Electro-physical properties of silicon doped with phosphorus by ion bombardment: R M Aranovich et al, Radiation Phys Cryst p-n Junct, Coll, Nauka i Tekhnika Minsk 1972, 72–77 (in Russian)

• Publisher: Elsevier Science
• Year: 1974
• Tongue: English
• Weight: 165 KB
• Volume: 24
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/0042-207x(74)90202-4