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Electrically stimulated movement of edge dislocations in silicon in the temperature range 300–450 K

✍ Scribed by A. A. Skvortsov; A. M. Orlov; V. A. Frolov; A. A. Solov’ev

Book ID: 110125275
Publisher: SP MAIK Nauka/Interperiodica
Year: 2000
Tongue: English
Weight: 104 KB
Volume: 42
Category: Article
ISSN: 1063-7834
DOI: 10.1134/1.1324039

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