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Electrical transport properties of single GaN and InN nanowires

✍ Scribed by Chih-Yang Chang; Gou-Chung Chi; Wei-Ming Wang; Li-Chyong Chen; Kuei-Hsien Chen; F. Ren; S. J. Pearton


Book ID
107453641
Publisher
Springer US
Year
2006
Tongue
English
Weight
227 KB
Volume
35
Category
Article
ISSN
0361-5235

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πŸ“œ SIMILAR VOLUMES


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We report the synthesis, optical and transport properties of N-deficient InN nanowires (In:N ΒΌ 1:0.82). It is found that these nanowires exhibited a typical metallic conduction behavior over the temperature range from 5 to 300 K, without any sign of the transition from metal to semiconductor. Raman

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## Abstract In this paper, the achievement of nearly intrinsic InN nanowire is reported. With the use of an in situ deposited In seeding layer, nearly defect‐free, non‐tapered InN nanowires are grown directly on Si(111) substrates by molecular beam epitaxy. The photoluminescence emission of a singl