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Electrical transport in superlattices containing InAs quantum dots in GaAs and InP

✍ Scribed by C. Walther; B. Herrmann; I. Hähnert; W. Neumann; W.T. Masselink

Publisher: Elsevier Science
Year: 1999
Tongue: English
Weight: 85 KB
Volume: 25
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.1998.0613

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✦ Synopsis

Selectively-doped heterostructures based on both GaAs and InP containing several atomic layers coverage of InAs as both strained 2D and partially relaxed 3D (quantum dot) have been grown by gas source molecular beam epitaxy and the transport properties have been investigated.

We show that while coherently strained InAs in 2D layers results in increased electron mobilities, the formation of 3D quantum dots appear to trap electrons and decrease significantly the mobility of those remaining. The degree of trapping is dependent on the size and density of the dots.

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