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Electrical switching of the edge channel transport in HgTe quantum wells with an inverted band structure

✍ Scribed by Zhang, L. B.; Cheng, F.; Zhai, F.; Chang, Kai

Book ID: 120345163
Publisher: The American Physical Society
Year: 2011
Tongue: English
Weight: 449 KB
Volume: 83
Category: Article
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.83.081402

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