Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices

✍ Scribed by Cher Xuan Zhang, ; En Xia Zhang, ; Fleetwood, D. M.; Alles, M. L.; Schrimpf, R. D.; Song, E. B.; Sung Min Kim, ; Galatsis, K.; Wang, K. L. W.

• Book ID: 118152402
• Publisher: IEEE
• Year: 2012
• Tongue: English
• Weight: 859 KB
• Volume: 59
• Category: Article
• ISSN: 0018-9499
• DOI: 10.1109/tns.2012.2224135