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Electrical resistivity of Mn-doped SnTe crystals at low temperature

✍ Scribed by Masasi Inoue; Hisao Yagi; Kiyoaki Ishii; Toshiaki Tatsukawa

Publisher
Springer US
Year
1976
Tongue
English
Weight
255 KB
Volume
23
Category
Article
ISSN
0022-2291

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✦ Synopsis

The temperature dependence of the resistivity over the range 1.8-20 K has been measured on the narrow-gap semiconductor SnTe with various Mn contents (<2.2at.%) and carrier concentrations [p = (1.~8) x lO2~ cm 3]. The resistivity shows an anomaly at some magnetic ordering temperature Tin, which depends sublinearly on the Mn content c, but not linearly. However, together with a negative magnetoresistance, we have confirmed that the carrier scattering in this crystal is due to the s-d interaction as in dilute magnetic alloys.

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