Measurements are reported on the temperature dependence of the d.c. conductivity in the c-direction of kish graphite. These results show that both the magnitude and temperature dependence of the c-axis conduction are similar to results reported in single crystal graphite, but qualitatively different
Electrical resistivity of highly crystallized kish graphite
β Scribed by Yoshihiro Hishiyama; Yutaka Kaburagi
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 387 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0008-6223
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β¦ Synopsis
We obtained large and highly crystallized kish graphite flakes and measured the temperature dependence of the in-plane electrical resistivity for the specimens with the p31XIKIp4 2K values of 56 and 106 at temperatures between 1.28 and 300 K. The temperature-dependent component of the resistivity pr was examined precisely, particularly at low temperatures. Below about 5 K, pr is proportional to T', then increases faster to nearly T3 (pr 31 T*') to about 15 K with increasing T. This is the intrinsic behavior of pT for graphite crystal because of high crystallinity of the present specimens. The 'P7 dependence in the temperature range 5 -15 K is due to the scattering of carriers by the out-of-plane phonons, whereas the Tz de~ndence at temperatures below about 5 K is attributed to the electronhole scattering as described by More% and Uher.
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Magnetoreflection experiments have been performed on samples of pyrolytic, single crystal and kish graphite. Comparing the data for these samples we conclude that with a single set of band parameters the Slonczewski-Weiss-McClure band model adequately describes the magnetoreflection data for all thr
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