Electrical resistivity and thermoelectric power of Fe91Zr9

✍ Scribed by Y.S Choi; S.S Choi; Y.W Park; M Hirscher; H Kronmüller

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 448 KB
• Volume: 181-182
• Category: Article
• ISSN: 0921-5093
• DOI: 10.1016/0921-5093(94)90795-1

✦ Synopsis

The electrical resistivity (p) and thermoelectric power (TEP) have been measured for amorphous and partially crystallized FeglZr9 in the temperature range 20-300 K to investigate the effect of crystallization on the electronic structure of FeglZr9 . The temperature coefficient of electrical resistivity (TCR), d In p/d T, and TEE which are negative for the amorphous sample, change to positive values as the crystalline portion is increased. The temperature dependence of p for partially crystallized alloys suggests that the contribution by phonon scattering increases. As the crystalline concentration increases, the magnitude of the resistivity decreases, and the temperature-dependent TEP of partially crystallized Feg~Zr 9 becomes similar to that of crystalline Fe2Zr. The effect of hydrogenation on these properties of F%~Zr,~ has been studied.