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Electrical properties ofp+/n+InGaAsP tunnel diodes with a bandgap of 0.95 eV grown by liquid phase epitaxy

โœ Scribed by C. C. Shen; P. T. Chang


Book ID
104726073
Publisher
Springer
Year
1994
Tongue
English
Weight
334 KB
Volume
59
Category
Article
ISSN
1432-0630

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