Electrical properties of sub-100 nm Cu films deposited by electroless plating on amino-terminated silicon oxide activated with Au nano-particles
✍ Scribed by A. Inberg; E. Glickman; T. Asher; N. Fishelson; Y. Shacham-Diamand
- Book ID
- 104094623
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 589 KB
- Volume
- 204
- Category
- Article
- ISSN
- 0257-8972
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✦ Synopsis
Self-assembled organic monolayers (SAMs) are good coupling agents and diffusion barriers at Cu/SiO 2 and Cu/ low-k interfaces and are considered therefore as important elements of future all-wet ULSI metallization with sub-45 nm Cu deposited by electroless plating (ELD). We formed SAM of 3-aminopropyltrimethoxy silane (APTMS) onto SiO 2 /Si substrate, activated the surface of APTMS with 5, 8, 15 and 25 nm Au nanoparticles (AuNPs), deposited (30-100) nm films of Cu by ELD and measured electrical resistivity ρ of the films in the as-deposited state and after vacuum annealing at 220 C. The size of AuNPs was found to be a key factor in getting low resistance sub-100 nm Cu films by ELD. The resistivity ρ ≈ 4 ± 0.8 μΩ•cmconsiderably smaller compared to the previously reported datawas achieved with the use of 5 nm AuNPs. XPS and AFM revealed nano-pores, which can contribute to ρ but do not compromise likely the diffusion barrier properties of the SAM.