Electrical properties of silicon dioxide films fabricated at 700°C. II: Low pressure hydride deposition

✍ Scribed by M. E. Zvanut; F. J. Feigl; S. R. Butler; S. L. Titcomb

• Book ID: 112817709
• Publisher: Springer US
• Year: 1985
• Tongue: English
• Weight: 910 KB
• Volume: 14
• Category: Article
• ISSN: 0361-5235
• DOI: 10.1007/bf02661227