Electrical properties of rare earth silicides produced by channeled ion beam synthesis

✍ Scribed by S.M Hogg; A Vantomme; M.F Wu; G Langouche

• Book ID: 104306728
• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 85 KB
• Volume: 50
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(99)00284-1

✦ Synopsis

Electrical measurements have been performed on ErSi , YSi and Er Y Si , produced by channeled ion beam 1.7 1.7 0.5 0.5 1.7

synthesis. The results have been compared with thin films of the same rare earth silicides produced by other methods. The room temperature resistivities of the ErSi , YSi and Er Y Si are 52, 69 and 87 mV cm, respectively, significantly 1.7 1.7 0.5 0.5 1.7

higher than the reported values for MBE synthesised layers. The ErSi shows evidence of magnetic ordering, but this is not 1.7 observed in either the YSi or the Er Y Si down to 3 K.