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Electrical properties of InAlAs/InAsxP1-x/InP composite-channel modulation-doped structures grown by solid source molecular beam epitaxy

✍ Scribed by Tong-Ho Kim; April S. Brown; Robert A. Metzger


Book ID
107452497
Publisher
Springer US
Year
2000
Tongue
English
Weight
209 KB
Volume
29
Category
Article
ISSN
0361-5235

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