Electrical properties of heterojunctions of PVDF-C2F3H/polypyrrole composites with p- or n-doped silicon
✍ Scribed by J. K. Jeszka; A. Sroczyńska; G. Boiteux; A. Ho-Hoang; M. Lamaire; F. Fache; M. Kryszewski
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 336 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1616-301X
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✦ Synopsis
The temperature dependence of the electrical properties of heterojunctions formed by polypyrrole composites with PVDF copolymer and silicon were studied. We show that using such composites it is possible to prepare junctions with good rectifying properties, comparable with those obtained using polypyrrole or poly( Kmethylpyrrole). The observed forward-bias current-voltage characteristics can be satisfactorily fitted using a modified Schottky equation. The temperature dependence of the I-V characteristics shows that the transport mechanism, especially in the case of p-Si junctions, is more complicated and probably tunnelling between localised levels plays an important role.