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Electrical properties of GeSeTl thin films deposited by e-beam evaporation technique

✍ Scribed by M.M. Abd El-Raheem

Book ID
113783182
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
635 KB
Volume
116
Category
Article
ISSN
0254-0584

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In this article, the conduction mechanisms of metal-oxide-semiconductor with vacuum annealed Lanthana (La 2 O 3 ) oxide film are investigated. Lanthana films with thicknesses of 3.5, 4.7, and 11 nm were deposited by E-beam evaporation on n-Si (100), and annealed at various temperatures (300-500 8C)