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Electrical properties of epitaxial germanium films on germanium

✍ Scribed by G.C. Dubey

Publisher: Elsevier Science
Year: 1974
Tongue: English
Weight: 613 KB
Volume: 24
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(74)90252-1

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## Abstract Ge homojunctions were deposited by means of Metal Organic Vapour Phase Epitaxy (MOVPE) on Ge substrates at 550 °C and 675 °C, using AsH~3~ as n‐type dopant. Ge~n~/Ge~p~, GaAs~n~/InGaP~n~/Ge~n~/Ge~p~ and Ge~n~/Ge~p~/Ge~p~ structures were prepared and studied, where n and p identify the l