Electrical properties of BaSnO3in substitution of antimony for tin and lanthanum for barium

✍ Scribed by Tongkai Huang; TetsurŌ Nakamura; Mitsuru Itoh; Yoshiyuki Inaguma; Osamu Ishiyama

• Book ID: 104747036
• Publisher: Springer
• Year: 1995
• Tongue: English
• Weight: 504 KB
• Volume: 30
• Category: Article
• ISSN: 0022-2461
• DOI: 10.1007/bf00375264

✦ Synopsis

Polycrystalline materials of BaSnl_xSbxOa_~ and Bal_~,LaySnO3_~ were prepared. Substitutional solubilities of antimony for tin and lanthanum for barium, respectively, in BaSnO3 were obtained to be x= 0.18 for BaSn~_xSbxO3_~ and y < 0.052 for Bal_u The X-ray photoemission spectroscopy measurements showed the valence of antimony and tin is mixed in our samples of BaSn~_xSbxO3_~. At lower temperature, magnetic susceptibilities of BaSn~-xSbxO3-~ and Bal _~,La~,SnO3_~ satisfy the Curie law, indicating the existence of non-interacting localized electrons at the Sn 4+ site, and forming a Sn 4+ +estate in these systems. By substitution of antimony and lanthanum in BaSnO3, the conductive properties are semiconductor-like. To explain this conductive behaviour, three types of mechanism were taken into consideration.