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Electrical properties of amorphous tantalum pentoxide thin films on silicon

โœ Scribed by Oehrlein, G. S.; Reisman, A.


Book ID
121298779
Publisher
American Institute of Physics
Year
1983
Tongue
English
Weight
804 KB
Volume
54
Category
Article
ISSN
0021-8979

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Effect of a silicon nitride buffer layer
โœ B.Y. Wang; Hao Wang; C. Ye; Y. Wang; Y. Ye; W.F. Wang ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 495 KB

Ta 2 O 5 films with a buffer layer of silicon nitride of various thicknesses were deposited on Si substrate by reactive sputtering and submitted to annealing at 700 ยฐC in nitrogen atmosphere. The microstructure and the electrical properties of thin films were studied. It was found that with a buffer