Effect of a silicon nitride buffer layer
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B.Y. Wang; Hao Wang; C. Ye; Y. Wang; Y. Ye; W.F. Wang
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Article
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2010
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Elsevier Science
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English
โ 495 KB
Ta 2 O 5 films with a buffer layer of silicon nitride of various thicknesses were deposited on Si substrate by reactive sputtering and submitted to annealing at 700 ยฐC in nitrogen atmosphere. The microstructure and the electrical properties of thin films were studied. It was found that with a buffer