Electrical properties improvement of high-k HfO2 films by combination of C4F8 dual-frequency capacitively coupled plasmas treatment with thermal annealing

✍ Scribed by Zhang, H.Y.; Ye, C.; Jin, C.G.; Wu, M.Z.; Wang, Y.Y.; Zhang, Z.; Huang, T.Y.; Yang, Y.; He, H.J.; Zhuge, L.J.; Wu, X.M.

• Book ID: 122420926
• Publisher: Elsevier Science
• Year: 2014
• Tongue: English
• Weight: 795 KB
• Volume: 311
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2014.05.021