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Electrical properties and phase transition of Ge1−xSnxSe2.5thin films

✍ Scribed by S. A. Fayek; M. H. Ali

Book ID
104734343
Publisher
Springer
Year
1995
Tongue
English
Weight
409 KB
Volume
30
Category
Article
ISSN
0022-2461

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✦ Synopsis

The Gel_xSnxSezs system was prepared by melting the correct ratio of high purity elements in quartz evacuated ampoules followed by quenching in ice. It was found that, within the Gel -xSnxSez5 system, a glassy state can be formed when 0 ~< x ~< 0.4. On increasing xto 0.6 a glassy state could not be obtained, as is confirmed by X-ray diffraction. Differential thermal analysis (DTA) was carried out to study the effect of composition on the stability of amorphous phase. Ge~_xSnxSez5 (where 0 ~< x~< 0.6) thin films have been prepared by the thermal evaporation technique. The electrical conductivity of the thin films have been studied as a function of composition and film thickness.

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