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Electrical-efficiency analysis of GaN-based light-emitting diodes with interdigitated-mesa geometry

✍ Scribed by Yi-Sheng Ting; Chii-Chang Chen; Jinn-Kong Sheu; Gou-Chung Chi; Jung-Tsung Hsu

Book ID
107453017
Publisher
Springer US
Year
2003
Tongue
English
Weight
101 KB
Volume
32
Category
Article
ISSN
0361-5235

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Spectra and quantum efficiency h e of green LEDs based on heterostructures InGaN/AlGaN/GaN with multiple quantum wells were studied at currents J = 10 Β± Β±6 to 10 Β± Β±1 A. Minor differences in h e (of AE10% at J % 10 mA) are caused by sufficiently different distributions of effective charges in the sp