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Electrical effects of clustered defects in heteroepitaxial Si films

โœ Scribed by E.P. Eernisse; C.B. Norris

Publisher
Elsevier Science
Year
1973
Tongue
English
Weight
855 KB
Volume
16
Category
Article
ISSN
0038-1101

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Proton bombarded p-Si and neutron irradiated n-GaAs have been studied by DLTS, currentยฑvoltage, and capacitanceยฑvoltage measurements in metalยฑsemiconductor junctions. The junctions were prepared by evaporation of Al onto silicon and of gold onto GaAs. Both junctions exhibited defect bands after bomb