Electrical conduction of high-conductivity layers near the surfaces in hydrogenated homoepitaxial diamond films

✍ Scribed by S Yamanaka; D Takeuchi; H Watanabe; H Okushi; K Kajimura

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 185 KB
• Volume: 159-160
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00104-5

✦ Synopsis

In order to clarify the origin of high-conductivity layers HCL near the surfaces of hydrogenated diamond films, we have Ž . studied the relationship between HCL and surface structure in B-doped homoepitaxial 001 diamond films. Samples annealed in nitrogen environment at various temperatures have been characterized by Hall-effect measurements and reflection high-energy electron diffraction. It was found that HCL disappeared in the films annealed at a temperature higher Ž . than 3508C, but the 001 -2 = 1 surface-structures observed in hydrogenated films remained at 3508C. This indicates that Ž . HCL is not related directly with the 001 -2 = 1 surface-structure. The origin of HCL will be discussed on the basis of the present results.