Electrical characterizations of PZT ceramics in large frequency and temperature ranges
β Scribed by D. Fasquelle; J.C. Carru
- Book ID
- 104022871
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 432 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0955-2219
No coin nor oath required. For personal study only.
β¦ Synopsis
Electrical properties of PbZr 0.75 Ti 0.25 O 3 ceramics have been characterized. The measurements have been made in frequency ranging from 20 to 2.10 9 Hz and between 20 and 730 β’ C for low and medium frequencies. Typically at room temperature, the dielectric constant Ξ΅ is higher than 500 at 1 MHz whereas the loss tangent is close to 0.01. From Ξ΅ (T) measurements, the Curie temperature of our sample has been determined at 320 β’ C. In the paraelectric state, Ξ΅ (T) follows the empirical Curie-Weiss law near the phase transition which is of second order type. The increase of Ξ΅ observed at high temperatures and low frequencies in the paraelectric state are explained: this abnormal behavior is due to the migation of oxygen ions towards the electrodes, creating an additional non-ferroelectric interface which generates a Maxwell-Wagner effect.
π SIMILAR VOLUMES
In a computer controlled impedance setup, the current sensitivity of the Solartron SI-1260 Impedance/Gain Phase Analyzer is improved by six orders of magnitude by the Keithley 428 Current Amplifier. Impedances up to the order of 1013 R can be measured at low frequencies with the ac signal of 30mV rm
Poly(methy1 methacrylate)-bZock-polybutadiene-block-poly(methyl methacrylate) (MBM) triblock copolymers and their hydrogenated counterparts with poly(ethy1ene-co-1,2-butylene) midblock (MEBM) were swollen by an aliphatic oil of high boiling point which is a selective solvent for the central block. T
In this study, we have examined Au/TiO 2 /n-Si Schottky barrier diodes (SBDs), in order to interpret in detail the experimental observed non-ideal current-voltage-temperature (I-V-T) characteristics. I-V characteristics were measured in the wide temperature range of 80-400 K. TiO 2 was deposited on