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Electrical characterization of thermally grown native oxide on gallium antimonide

✍ Scribed by S. Basu; Nandita Basu; P. Barman


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
259 KB
Volume
9
Category
Article
ISSN
0921-5107

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In this study, a stable process for fabrication of dielectric dual layers consisting of a low pressure thermal oxide layer and a deposited nitride layer for gate dielectric applications was established. The ON (oxide nitride) dual layers were compared to silicon oxide layers up to 5 nm thickness the