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Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers by Schottky barrier diodes

✍ Scribed by Suzuki, Mariko; Yoshida, Hiroaki; Sakuma, Naoshi; Ono, Tomio; Sakai, Tadashi; Koizumi, Satoshi

Book ID: 121482241
Publisher: American Institute of Physics
Year: 2004
Tongue: English
Weight: 224 KB
Volume: 84
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1695206

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