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Electrical characteristics of neutron irradiation induced defects in n-GaAs

โœ Scribed by F.D. Auret; A. Wilson; S.A. Goodman; G. Myburg; W.E. Meyer

Book ID
113285612
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
538 KB
Volume
90
Category
Article
ISSN
0168-583X

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Proton bombarded p-Si and neutron irradiated n-GaAs have been studied by DLTS, currentยฑvoltage, and capacitanceยฑvoltage measurements in metalยฑsemiconductor junctions. The junctions were prepared by evaporation of Al onto silicon and of gold onto GaAs. Both junctions exhibited defect bands after bomb