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Electrical characteristics of a vertically integrated field-effect transistor using non-intentionally doped Si nanowires

✍ Scribed by G. Rosaz; B. Salem; N. Pauc; P. Gentile; A. Potié; T. Baron


Book ID
113797891
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
417 KB
Volume
88
Category
Article
ISSN
0167-9317

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