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Electrical and structural changes in GaAs crystals from high-energy, heavy-ion implants

✍ Scribed by T.T. Bardin; J.G. Pronko; F.A. Junga; W.G. Opyd; A.J. Mardinly; F. Xiong; T.A. Tombrello


Book ID
113278637
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
697 KB
Volume
24-25
Category
Article
ISSN
0168-583X

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## Infra-red transmission and electrical characteristics of single crystal GaAs substrates implanted with 70 MeV "'Sn ions have been investigated after implantation andsubsequentannealing treatments. The optical density cxx is found to increase with implanted dose overphoton energy range 0.6-1.4 e