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Electrical and photoluminescence properties of carbon implanted ZnO bulk single crystals

✍ Scribed by K. Matsumoto; K. Kuriyama; K. Kushida

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
305 KB
Volume
267
Category
Article
ISSN
0168-583X

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## Abstract Both p‐type and n‐type CuInSe~2~ single crystals were implanted with 40 keV ^130^Xe^+^ ions up to doses of 5 Β· 10^16^ cm^βˆ’2^. Implanted layers on p‐type substrates showed an initial increase of the resistivity followed by a continuous decrease of the resistivity at higher doses. Implant