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Electrical and optical properties of self-assembled InAs quantum dots in InP studied by space-charge spectroscopy and photoluminescence

✍ Scribed by Pettersson, H.; Pryor, C.; Landin, L.; Pistol, M.-E.; Carlsson, N.; Seifert, W.; Samuelson, L.

Book ID
124067428
Publisher
The American Physical Society
Year
2000
Tongue
English
Weight
81 KB
Volume
61
Category
Article
ISSN
1098-0121

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Initial stages of self-assembled growth of InAs dots on GaAs 001 and a postgrowth evolution of the deposited surface Ε½ . Ε½ . have been investigated by reflectance-difference RD spectroscopy and reflection high-energy electron diffraction RHEED . Ε½ . A significant change in the RD spectrum occurs e