Electrical and optical properties of LixNi1-xO/In:MgxZn1-xO heteroepitaxial junction grown on TiN buffered Si

✍ Scribed by Wong, H. F. ;Wong, K. H. ;Lau, C. H.

• Publisher: John Wiley and Sons
• Year: 2009
• Tongue: English
• Weight: 230 KB
• Volume: 206
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200881786

✦ Synopsis

Abstract

P‐type Li doped NiO (LNO) and n‐type In doped cubic Mg~x~Zn~1–x~O (In:MZO) thin films were grown on TiN buffered Si (100) substrates by pulsed laser deposition. A heteroepitaxial relationship of (001)~LNO~||(001)~In:MZO~ ||(001)~TiN~||(001)~Si~ was obtained. These heterostructures showed good p–n junction current–voltage characteristics with a current rectification ratio of 400 at bias voltages of ±4 V. The typical current turn‐on voltage at room temperature was 2.8 V. It decreased to 2.6 V at 400 K. The spectral responses of these heterojunctions were measured in the near UV region. Our results have suggested that LNO/In:MZO heterojunction is a potential candidate for Solar‐blind UV detector.