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Electrical and optical characterization of ion-implanted CuGaSe[sub 2] single crystals

✍ Scribed by J. H. Schön; E. Arushanov; L. L. Kulyuk; A. Micu; D. Shaban; V. Tezlevan; N. Fabre; E. Bucher


Book ID
121813436
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
330 KB
Volume
84
Category
Article
ISSN
0021-8979

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Electrical properties of CuGaSe2single c
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## Abstract CuGaSe~2~ single crystals were grown by iodine vapour transport method, whereas polycrystalline thin films were obtained by coevaporation technique from three sources. The variation of the hole concentration with temperature of CuGaSe~2~ single crystal in the high temperature region is