Electric-field effect devices made of YBa2Cu3O7−x/SrTiO3 epitaxial multilayers

✍ Scribed by K. Joosse; Yu.M. Boguslavskij; G.J. Gerritsma; H. Rogalla; J.G. Wen; A.G. Sivakov

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 773 KB
• Volume: 224
• Category: Article
• ISSN: 0921-4534
• DOI: 10.1016/0921-4534(94)90620-3

✦ Synopsis

Three terminal superconducting electric-field effect devices, consisting of a bufferlayer of PrBa2Cu307 -x, an ultrathin layer of YBa2CuaOT_x and a SrTiO3 gate isolation layer were fabricated and successfully operated. Transmission electron microscopy and laser scanning microscopy showed that all layers are highly epitaxial and uniform over the device area. This is essentially important in the analysis of the mechanism of the electric field effect and for the reproducible fabrication of devices. With a 5 nm thick YBa2Cu3OT_x layer and an applied electric field of 0.85 MV/cm the critical current was decreased by 5% at low temperatures and up to 36% close to To. Also enhancement was obtained.