Complete active space MC SCF (CAS SCF) followed by second-order configuration interaction (SOCI) calculations are carried out for the three lowest-lying states of ScH2. The potential energy surface of the 'A, state is investigated as a function of bending angle. A barrier ( < 36 kcal/mole) is found
Eight electronic states and potential energy surfaces of Ge3
β Scribed by Dingguo Dai; K. Sumathi; K. Balasubramanian
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 569 KB
- Volume
- 193
- Category
- Article
- ISSN
- 0009-2614
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β¦ Synopsis
Complete active space multiconfiguration self-consistent field followed by multireference singles+doubles configuration interaction calculations are made on eight electronic states of GeJ. We compute the entire bending potential energy surfaces of these states. We find two nearly degenerate states ('A,, 3B2) as candidates for the ground state of Ge,. Six excited electronic states within z I eV of the ground state are also found.
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We compute the properties of twelve electronic states (of singlet, triplet and quintet spin multiplicities) of Zr3 using the complete active space multiconfiguration self-consistent field (CA!+MCSCF) method followed by multireference sin-gles+doubles configuration interaction (MRSDCI) calculations.
Using recently published potential energy surfaces, rovibrational energy levels are computed for the ground electronic states of H O and NO , using three-2 2 Ε½ . dimensional discrete variable representation DVR algorithms. Calculations are presented for H O to demonstrate the accuracy of these algor
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