The present paper demonstrates the suitability of artificial neural network (ANN) for modelling of a FinFET in nano-circuit simulation. The FinFET used in this work is designed using careful engineering of source-drain extension, which simultaneously improves maximum frequency of oscillation f max b
β¦ LIBER β¦
Efficient power modelling approach of sequential circuits using recurrent neural networks
β Scribed by Hsieh, W.-T.; Shiue, C.-C.; Liu, C.-N.J.
- Book ID
- 114448658
- Publisher
- The Institution of Electrical Engineers
- Year
- 2006
- Tongue
- English
- Weight
- 196 KB
- Volume
- 153
- Category
- Article
- ISSN
- 1350-2387
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