Efficient injection-type ballistic rectification in Si/SiGe cross junctions
✍ Scribed by D. Salloch; U. Wieser; U. Kunze; T. Hackbarth
- Book ID
- 104086946
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 382 KB
- Volume
- 42
- Category
- Article
- ISSN
- 1386-9477
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✦ Synopsis
Tunable inertial-ballistic rectification is studied in a nanoscale injection-type Si/SiGe rectifier in the hot-electron regime. The rectifier consists of a cascade of two nanoscale cross junctions in series. Two pairs of opposing current injectors merge under 30 3 into a straight central voltage stem. The electron densities in the injectors and the stem can be adjusted separately by two local top-gates. The measurements reveal a substantial efficiency increase for a nearly depleted stem. The efficiency of ballistic rectifiers can be expressed by the transfer resistance R T (output voltage divided by input current), the best value we achieve is 800 O.