Efficiency calculations of various heterostructure solar cells with n-(indium tin oxide) as the top wide band gap semiconductor
✍ Scribed by Vinod K. Jain; R.K. Purohit; B.L. Sharma
- Book ID
- 103901383
- Publisher
- Elsevier Science
- Year
- 1982
- Weight
- 341 KB
- Volume
- 6
- Category
- Article
- ISSN
- 0379-6787
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✦ Synopsis
The major effort during the past few years has been centred on reducing the cost of terrestrial solar cells. One of the most promising ways is to form semiconductor-insulator-semiconductor heterostructures with transparent conducting n-(indium tin oxide) as the top semiconductor and silicon as the base semiconductor. In this paper the process<lependent behaviour of such heterostructures is explained on the basis of surface states at the insulator-semiconductor interface and fixed charge in the insulating oxide layer. The calculated efficiencies of various heterostructure solar cells which have indium tin oxide as one of the constituents are also presented.