Effects of tungsten doping on the CDW states of η-Mo4O11

✍ Scribed by Takashi Kambe; Shizuko Tsuboi; Nobuaki Nagao; Yoshio Nogami; Kokichi Oshima

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 75 KB
• Volume: 18
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(02)00963-3

✦ Synopsis

The Á-Mo4O11 system shows successive CDW transitions due to its two-dimensional Fermi surface instability. We ÿnd that the lower temperature CDW-II transition easily disappears by doping a small amount of W atoms (less than 0.2%/Mo), though the higher temperature CDW-I transition is weakly depressed. The W atoms possibly substitute both the intra-and the inter-layer Mo sites. The doping e ectively reduce the carrier compensation, leading to the suppression of TCDW-I. Moreover, the interlayer coherence between the intralayer two-dimensional CDWs may be destroyed by the substitution between the layers since the modulation of CDW-II state has an interlayer component. The resistivity along the conducting plane follows "log T " dependence below 10 K, suggesting that the W atoms doped within the layer should induce the Anderson-type charge localization.