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Effects of Thermal Annealing on the Structure of Ferroelectric Thin Films

✍ Scribed by Jiang-Li Cao; Axel Solbach; Uwe Klemradt; Thomas Weirich; Joachim Mayer; Ulrich Böttger; Ulrich Ellerkmann; Peter J. Schorn; Peter Gerber; Rainer Waser


Book ID
109259687
Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
464 KB
Volume
89
Category
Article
ISSN
0002-7820

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Effects of thermal annealing on structur
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In this work we have studied the influence of thermal annealing on the structural and electrical properties of W-Ti thin films, deposited on n-type (100) silicon wafers. The films were deposited by d.c. sputtering from a 90:10 wt.% W-Ti target, using Ar ions, to a thickness of ~170 nm. After deposit