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Effects of temperature and oxygen pressure on binary oxide growth using aperture-controlled combinatorial pulsed-laser deposition

✍ Scribed by Nabil D. Bassim; Peter K. Schenck; Eugene U. Donev; Edwin J. Heilweil; Eric Cockayne; Martin L. Green; Leonard C. Feldman

Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 696 KB
Volume: 254
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2007.05.089

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Zinc oxide (ZnO) thin films have been prepared by pulsed laser deposition (PLD) technique at room temperature on quartz and single crystal silicon (1 0 0) substrates. The oxygen ambient gas pressure was attained at 6 Torr during the deposition. The deposited films were post-growth annealed in air at