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Effects of substrate relaxation in regular chemisorption. Hydrogen on graphite

โœ Scribed by Roberto Dovesi; Cesare Pisani; Franco Ricca; Carla Roetti

Book ID
103015050
Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
371 KB
Volume
44
Category
Article
ISSN
0009-2614

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โœฆ Synopsis

Substrate refaxation is shown EO pray an important role in the I : 2 regular chemisorption of hydrogen atoms above alternate carbon atoms in a graphire monolayer. Binding energy, populatioa analysis and electron density maps show that the direct H-C bond is strengthened on relaxation.

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โœ Y. Yamashita; R. Nakagawa; Y. Sakamoto; T. Ishiyama; Y. Kamiura ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 132 KB

Effects of hydrogen treatment on post-growth strain relaxation of GeSi epitaxial films on Ge substrate were studied. We found that pre-hydrogen treatment at room temperature enhanced strain relaxation during subsequent thermal treatment. We also confirmed that the relaxation enhancement effect becam