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Effects of residual impurities on Zn electrical activity in Zn-doped InGaAlP grown by metalorganic chemical vapor deposition

โœ Scribed by Yukie Nishikawa; Mariko Suzuki; Masayuki Ishikawa; Yoshihiro Kokubun; Gen-ichi Hatakoshi

Book ID
107791909
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
687 KB
Volume
123
Category
Article
ISSN
0022-0248

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Phase separation in Zn-doped InGaN grown
Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition
โœ Z.C Feng; T.R Yang; R Liu; T.S.A Wee ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 137 KB

Zn-doped InGaN thin films were deposited on GaN/sapphire by metalorganic chemical vapor deposition, and studied by a combination of high-resolution X-ray diffraction (HR-XRD), micro-photoluminescence (PL) and secondary ion mass spectrometry (SIMS). Indium phase separation is studied comparatively. H