Effect of high electronic excitation in
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W. Wesch; A. Kamarou; E. Wendler; A. Undisz; M. Rettenmayr
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Article
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2007
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Elsevier Science
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English
β 413 KB
The damage evolution due to high electronic energy deposition during 375 MeV Xe and 593 MeV Au ion irradiation was studied in the semiconductors InP, GaP, GaAs, AlAs and Ge using RBS and TEM. In InP the high electronic energy deposition leads to the formation of amorphous tracks. In the other materi