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Effects of pressure on the structure of titanium nitride film in the preparation using metallic plasma-based ion implantation and deposition

✍ Scribed by Ken Yukimura; Tomoyuki Muraho; Masao Kumagai; Hidenori Saito; Mamoru Kohata; Toshiro Maruyama


Book ID
114167165
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
104 KB
Volume
206
Category
Article
ISSN
0168-583X

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Effects of substrate bias and argon flux
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## Abstract High‐quality titanium nitride (TiN) films with nano‐structure were prepared at ambient temperature on (111) silicon substrates by filtered cathodic arc plasma (FCAP) technology with an in‐plane β€œS” filter. The effects of substrate bias and argon flux on the crystal grain size, roughness