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Effects of post annealing on removal of defect states in silicon oxynitride films grown by oxidation of silicon substrates nitrided in inductively coupled nitrogen plasma

✍ Scribed by Rohana Perera; Akihiro Ikeda; Reiji Hattori; Yukinori Kuroki


Book ID
108388526
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
195 KB
Volume
423
Category
Article
ISSN
0040-6090

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