Effects of polarization field on vertical transport in GaN/AlGaN resonant tunneling diodes
โ Scribed by Seoung-Hwan Park, Jong-In Shim
- Book ID
- 119936863
- Publisher
- The Korean Physical Society
- Year
- 2012
- Tongue
- English
- Weight
- 181 KB
- Volume
- 60
- Category
- Article
- ISSN
- 0374-4884
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Resonant tunneling diodes (RTD) based on GaN/AlGaN heterojunctions should in principle show high values of peak/valley ratio due to the large conduction band discontinuities between GaN and AlGaN. Moreover, such structures have been studied to be used in quantum cascade lasers for near infrared emis
Improved methods for hydrogen leak detection are gaining interest as applications emerge in hydrogen-powered automobiles, proton-exchange membrane fuel cells, solid oxide fuel cells for spacecraft, and other industrial long-term sensing applications. Considerable progress has been demonstrated to da