Effects of Parasitic Capacitance, External Resistance, and Local Stress on the RF Performance of the Transistors Fabricated by Standard 65-nm CMOS Technologies

✍ Scribed by Han-Su Kim; Jedon Kim; Chulho Chung; Jinsung Lim; Joohyun Jeong; Jin Hyoun Joe; Jaehoon Park; Kang-Wook Park; Hansu Oh; Jong Shik Yoon

• Book ID: 114619167
• Publisher: IEEE
• Year: 2008
• Tongue: English
• Weight: 588 KB
• Volume: 55
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2008.2003995