Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

✍ Scribed by Lauenstein, Jean-Marie; Goldsman, Neil; Liu, Sandra; Titus, Jeffrey L.; Ladbury, Raymond L.; Kim, Hak S.; Phan, Anthony M.; LaBel, Kenneth A.; Zafrani, Max; Sherman, Phillip

• Book ID: 118022586
• Publisher: IEEE
• Year: 2011
• Tongue: English
• Weight: 806 KB
• Volume: 58
• Category: Article
• ISSN: 0018-9499
• DOI: 10.1109/tns.2011.2171995